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| ADE-208-438 E (Z) HAT2016R Silicon N Channel Power MOS FET 6th. Edition Jan. 1996 Application High speed power switching SOP-8 8 5 76 Features * * * * Low on-resistance Capable of 4V gate drive Low drive current High density mounting 78 DD 3 12 56 DD 4 2 G 4 G Ordering Information ---------------------------------------- Hitachi Cord EIAJ Cord JEDEC Cord FP-8DA -- MS-012AA S1 S3 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain ---------------------------------------- ---------------------------------------- ---------------------------------------- Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)* Pch*** Pch** Tch Tstg MOS1 MOS2 Ratings 30 20 6.5 52 3 2 150 -55 to +150 Unit V V A A W W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- * PW 10 s, duty cycle 1 % ** 1 Drive operation : When using the glass epoxy board (FR4 40 x 40x 1.6 mm), PW 10 s *** 2 Drive operation : When using the glass epoxy board (FR4 40 x 40x 1.6 mm), PW 10 s HAT2016R Table 2 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) Min 30 Typ -- Max -- Unit V Test conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, ID = 1 mA -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 20 -- -- V -------------------------------------------------------------------------------------- -- -- 1.0 -- -- -- -- 0.03 10 10 2.0 0.045 A A V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- ID = 4A VGS = 10V * ID = 4A VGS = 4V * ID = 4 A VDS = 10 V * VDS = 10 V VGS = 0 f = 1 MHz VGS = 4 V, ID = 4 A VDD = 10 V ------------------------------------------------ -- 0.05 0.08 -------------------------------------------------------------------------------------- Forward transfer admittance |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr 5 8 -- S -------------------------------------------------------------------------------------- Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time * Pulse Test -- -- -- -- -- -- -- -- 560 380 170 30 270 40 65 0.9 -- -- -- -- -- -- -- -- pF pF pF ns ns ns ns V IF = 6.5A, VGS = 0 IF = 6.5A, VGS = 0 diF / dt = 20 A / s ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- 45 -- ns -------------------------------------------------------------------------------------- HAT2016R Power vs. Temperature Derating 4.0 Pch (W) I D (A) Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW < 10 s 3.0 100 30 10 3 Maximum Safe Operation Area 10 s PW DC Op er ati 100 s 1 m s = 10 Channel Dissipation Drain Current ms 2 Dr 2.0 1 Dr ive 1 0.3 0.1 (P Operation in W < this area is 10 limited by R DS(on) s) on 1.0 Op ive er ra pe O tio n at ion ** 0.03 Ta = 25 C 1 shot pulse 0.01 1 Drive operation 150 Ta (C) 200 0.1 0.3 1 3 10 30 100 Drain to Source Voltage V DS (V) 0 50 100 Ambient Temperature ** When using the glass epoxy board (FR4 40 x 40x 1.6 mm) Typical Output Characteristics 20 10 V I D (A) (A) 16 6V 5V 4.5 V 4V 16 Pulse Test 3.5 V 8 3V VGS = 2.5 V 0 2 4 6 Drain to Source Voltage 8 10 V DS (V) 0 20 Typical Transfer Characteristics Tc = -25 C 25 C 75 C 12 ID Drain Current 12 Drain Current 8 4 4 V DS = 10 V Pulse Test 1 2 3 Gate to Source Voltage 5 4 V GS (V) HAT2016R Drain to Source Saturation Voltage vs. Gate to Source Voltage Pulse Test Drain to Source On State Resistance R DS(on) ( ) V DS(on) (V) 0.5 Static Drain to Source on State Resistance vs. Drain Current 0.5 Pulse Test 0.2 0.1 V GS = 4 V 0.4 Drain to Source Voltage 0.3 0.05 0.02 0.01 0.2 ID=5A 10 V 0.1 2A 1A 0 2 4 6 Gate to Source Voltage 8 V GS (V) 10 0.005 0.2 0.5 2 1 Drain Current 5 I D (A) 10 20 Static Drain to Source on State Resistance R DS(on) ( ) Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance vs. Temperature 0.10 Pulse Test 0.08 I D = 1 A, 2 A, 5 A V GS = 4 V Forward Transfer Admittance vs. Drain Current 20 10 5 75 C 2 1 0.5 0.2 0.2 V DS = 10 V Pulse Test 0.5 1 2 5 10 20 25 C Tc = -25 C 0.06 0.04 1 A, 2 A, 5 A 0.02 0 -40 10 V 0 40 80 120 160 Case Temperature Tc (C) Drain Current I D (A) HAT2016R 500 Reverse Recovery Time trr (ns) Body-Drain Diode Reverse Recovery Time 10000 3000 1000 Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz 200 100 50 Capacitance C (pF) Ciss 300 100 30 10 0 10 20 30 40 50 Drain to Source Voltage V DS (V) Coss Crss 20 10 5 0.2 di/dt = 20 A/s V GS = 0, Ta = 25C 0.5 1 2 5 10 20 Reverse Drain Current I DR (A) Dynamic Input Characteristics V DS (V) I D = 6.5 A V DD = 5 V 10 V 25 V V DS V GS 8 V GS (V) 50 20 1000 Switching Characteristics V GS = 4 V, V DD = 10 V 500 PW = 3 s, duty < 1 % Switching Time t (ns) tr 200 100 tf 50 t d(off) t d(on) 40 16 Drain to Source Voltage 30 12 20 10 V DD = 25 V 10 V 5V 8 16 24 32 Gate Charge Qg (nc) 4 0 40 Gate to Source Voltage 20 10 0.2 0 0.5 1 2 Drain Current 5 10 I D (A) 20 HAT2016R Reverse Drain Current vs. Souece to Drain Voltage 20 Pulse Test Reverse Drain Current I DR (A) 16 12 5V V GS = 0, -5 V 8 4 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage V SD (V) Package Dimensions * SOP-8 Unit : mm 5.0 Max 8 5 1 4 4.0 Max 1.75 Max 6.2 Max 0.25 Max 0 - 8 1.27 0.51 Max 0.25 Max 1.27 Max 0.15 0.25 M Hitachi Code FP-8DA -- EIAJ MS-012AA JEDEC |
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